Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

Chen, Z. Q.; Yamamoto, Shunya; Kawasuso, Atsuo; Xu, Y. H.; Sekiguchi, Takashi*

Applied Surface Science, 244(1-4), p.377 - 380, 2005/05

https://doi.org/10.1016/j.apsusc.2004.10.093

Homo- and heteroepitaxial ZnO films were grown by pulsed laser deposition on single crystal ZnO substrate and AlO substrate, respectively. The surface roughness probed by atomic force microscope (AFM) depends strongly on the substrate, which is much larger for the heteroepitaxial layer. Doppler broadening of positron annihilation measurements show existence of defects in both of the films, with a higher concentration in the homoepitaxial film. Raman scattering measurements reveal the E2 phonon vibration mode at 437 cm, which is characteristic of the wurtzite structure. These films show strong ultraviolet (UV) emission at 3.3 eV from the cathodoluminescence measurements, which indicates good optical properties.